Bistable 1060-nm High-Power Single-Mode DFB Laser Diode
We report a novel high-power bistable distributed feedback (DFB) semiconductor laser diode operating near 1060 nm, which is realized by inserting a high-bandgap electron barrier layer and a grating layer in a super large V-Neck optical cavity laser design.Optical and electrical bistable characteristics are both observed for this device.An on-state